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ACEx?
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CoolFET?
CROSSVOLT ?
DenseTrench?
DOME?
EcoSPARK?
E 2 CMOS TM
EnSigna TM
FACT?
FACT Quiet Series?
FAST ?
FASTr?
GlobalOptoisolator?
GTO?
HiSeC?
ISOPLANAR?
LittleFET?
MicroFET?
MICROWIRE?
OPTOLOGIC?
OPTOPLANAR?
PACMAN?
POP?
PowerTrench ?
QFET?
QS?
QT Optoelectronics?
Quiet Series?
SILENT SWITCHER ?
SMART START?
Star* Power?
Stealth?
SuperSOT?-3
SuperSOT?-6
SuperSOT?-8
SyncFET?
TinyLogic?
UHC?
UltraFET ?
VCX?
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
Datasheet Identification
Advance Information
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No Identification Needed
Obsolete
Product Status
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In Design
First Production
Full Production
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Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H1
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相关PDF资料
SI3445DV-T1-GE3 MOSFET P-CH 8V 6-TSOP
SI3454ADV-T1-GE3 MOSFET N-CH 30V 3.4A 6TSOP
SI3455ADV-T1-GE3 MOSFET P-CH 30V 2.7A 6TSOP
SI3457BDV-T1-GE3 MOSFET P-CH 30V 3.7A 6-TSOP
SI3457DV MOSFET P-CH 30V 4A SSOT-6
SI3458BDV-T1-GE3 MOSFET N-CH 60V 4.1A 6-TSOP
SI3460BDV-T1-GE3 MOSFET N-CH 20V 8A 6-TSOP
SI3460DV-T1-E3 MOSFET N-CH 20V 5.1A 6TSOP
相关代理商/技术参数
SI3443DV_NL 制造商:Fairchild Semiconductor Corporation 功能描述:
SI3443DV_Q 功能描述:MOSFET SSOT6 SINGLE PCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3443DV-NF073 制造商:Vishay Siliconix 功能描述:P-CH MOSFET TSOP-6 20V 65MOHM @ 4.5V - Rail/Tube
SI3443DVPBF 制造商:INTERFET 制造商全称:INTERFET 功能描述:HEXFET Power MOSFET
SI3443DV-T1 功能描述:MOSFET 20V 4.4A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3443DV-T1-E3 功能描述:MOSFET 20V 4.4A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3443DVTR 功能描述:MOSFET P-CH 20V 4.4A 6-TSOP RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
SI3443DV-TR 制造商:International Rectifier 功能描述: